Presentation Details |
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| Name: |
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(16a) Nanoelectronics with High Performance Computing: Simulations of Mobility in Nanoscale Transistors |
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| Time: |
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Thursday, June 26, 2014
10:30 am - 11:00 am |
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| Room: |
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Hall 4
CCL - Congress Center Leipzig |
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| Breaks: | 10:30 am - 11:00 am Coffee Break
07:30 am - 10:30 am Welcome Coffee |
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| Presenter: |
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Hoon Ryu, KISTI |
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| Abstract: |
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Mobility simulations in nanometer-scale field effect transistors is introduced as one of high performance computing applications in nanoelectronics. With a detailed description of the simulation process, we not only discuss the parallel scheme of our in-house 3D Schroedinger and Poisson equation solver, but also provide the strong scalability of these solvers coupled to realistic problems. As an example of related ongoing researches, we present the study of the hole-mobility pattern in silicon nanowires, investigating the effects of various scattering mechanisms on the hole transport. Calculating the hole-mobility under various gate biases and channel cross-section sizes, we observe that the mobility is severely degraded as the channel size is down-scaled, mainly due to the surface scattering.
Author
Hoon Ryu, Korea Institute of Science & Technology Information |
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