June 22–26, 2014
Leipzig, Germany

Dr. Sanghoan Chang

Principal Engineer in Flash Product Planning, Memory Business, Samsung Electronics

Dr. Chang started his career as Technical Staff in Flash Memory Development Team at Hyundai Electronics Inc. (HEI) where he was involved in process integration, device characterization, and yield enhancement for NOR Flash Memory. After joining SEC, he has worked in PRAM (Phase-change Random Access Memory) design, PRAM application exploration, and NAND Flash product planning. Currently he is focusing on SSD Planning for Data Centers. He holds MS degree in Physics from Seoul National University and Ph.D. degree in Computer Engineering from Texas A&M University.

Speaker at: Data Storage Technology
Thursday, June 26, 2014, 09:00 am - 10:30 am
  New Era ‘SSD 2.0’ – New Role & Responsibility of Flash Storage for Next Generation Computing Environment
Thursday, June 26, 2014, 09:20 am - 09:40 am